S71GL032A datasheet(13/102 Pages) SPANSION

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Publication Number S71GL032A_00

Revision A Amendment 0 Issue Date March 31, 2005

ADVANCE

INFORMATION

S29GL-A MirrorBit™ Flash Family

S29GL064A, S29GL032A

64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash

Memory Featuring 200 nm MirrorBit Process Technology

Data Sheet

Distinctive Characteristics

Architectural Advantages

Single power supply operation

— 3 volt read, erase, and program operations

Manufactured on 200 nm MirrorBit process

technology

Secured Silicon Sector region

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

— May be programmed and locked at the factory or by

the customer

Flexible sector architecture

— 64Mb (uniform sector models): 128 32 Kword (64 KB)

sectors

— 64Mb (boot sector models): 127 32 Kword (64 KB)

sectors + 8 4Kword (8KB) boot sectors

— 32Mb (uniform sector models): 64 32Kword (64KB)

sectors

— 32Mb (boot sector models): 63 32Kword (64KB)

sectors + 8 4Kword (8KB) boot sectors

Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-

power supply flash, and superior inadvertent write

protection

100,000 erase cycles typical per sector

20-year data retention typical

Performance Characteristics

High performance

— 90 ns access time

— 4-word/8-byte page read buffer

— 25 ns page read times

— 16-word/32-byte write buffer which reduces overall

programming time for multiple-word updates

Low power consumption (typical values at 3.0 V, 5

MHz)

— 18 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Software & Hardware Features

Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

— Unlock Bypass Program command reduces overall

multiple-word programming time

Hardware features

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Unprotect: VID-level method of

charging code in locked sectors

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings on uniform

sector models

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

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