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IXFN94N50P2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN94N50P2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150C 500 V V DGR T J = 25 C to 150C, R GS = 1M 500 V V GSS Continuous 30 V V GSM Transient 40 V I D25 T C = 25C 68 A I DM T C = 25C, Pulse Width Limited by TJM 240 A I A T C = 25C94 A E AS T C = 25C 3.5 J P D T C = 25C 780 W dv/dt I S I DM, VDD VDSS, TJ 150°C 30 V/ns T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C V ISOL 50/60 Hz, RMS, t = 1minute 2500 V~ I ISOL 1mA, t = 1s 3000 V~ M d Mounting Torque for Base Plate 1.5/13 Nm/lb.in Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 1mA 500 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.0 V I GSS V GS = 30V, VDS = 0V 200 nA I DSS V DS = VDSS, VGS= 0V 10 A T J = 125C 2 mA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 55 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN94N50P2 V DSS = 500V I D25 = 68A R DS(on) 55m t rr 250ns DS100555(8/13) Advance Technical Information PolarP2TM HiPerFETTM Power MOSFET Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low Q G Low R DS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications miniBLOC E153432 G D S S G = Gate D = Drain S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. |
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