IXFP12N65X2 datasheet(1/6 Pages) IXYS

Part #	IXFP12N65X2

Description	N-Channel Enhancement Mode Avalanche Rated

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

DS100749B(6/18)

X2-Class HiPERFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXFA12N65X2

IXFP12N65X2

IXFH12N65X2

V

DSS

= 650V

I

D25

= 12A

R

DS(on) 

 310m



Features



International Standard Packages



Low R

DS(ON) and QG



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

650

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

500

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

310 m



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

650

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

650

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C12

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

24

A

I

A

T

C = 25C6

A

E

AS

T

C = 25C

300

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

50

V/ns

P

D

T

C = 25C

180

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

G

S

D (Tab)

TO-220 (IXFP)

TO-263 (IXFA)

D (Tab)

S

G

D

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