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IXTH360N055T2 Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTH360N055T2
Description  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PDF  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH360N055T2 Datasheet(HTML) 5 Page - IXYS Corporation

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© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
20
30
40
50
60
70
40
60
80
100
120
140
160
180
200
ID - Amperes
TJ = 25ºC
TJ = 125ºC
RG = 2Ω , VGS = 10V
VDS = 27.5V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
23
45
67
89
10
11
12
13
14
15
RG - Ohms
20
30
40
50
60
70
80
90
100
110
120
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 27.5V
I D = 100A
I D = 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
30
40
50
60
70
80
90
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
40
50
60
70
80
90
100
110
t f
td(off) - - - -
RG = 2Ω, VGS = 10V
VDS = 27.5V
I D = 100A
I D = 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
35
40
45
50
55
60
65
70
75
40
60
80
100
120
140
160
180
200
ID - Amperes
40
50
60
70
80
90
100
110
120
t f
td(off) - - - -
RG = 2Ω, VGS = 10V
VDS = 27.5V
TJ = 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
0
10
20
30
40
50
60
70
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 2Ω , VGS = 10V
VDS = 27.5V
I D = 200A
I D = 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
2
3
4
5
6
7
8
9
10111213
1415
RG - Ohms
0
50
100
150
200
250
300
350
400
450
500
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 27.5V
I D = 100A, 200A
IXTH360N055T2
IXTT360N055T2



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