IXTH2N150L datasheet(1/5 Pages) IXYS

Part #	IXTH2N150L

Description	N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

2

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

6

A

P

D

T

C = 25C

290

W

T

J

-55 to +150

C

T

JM

+150

C

T

stg

-55 to +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

Weight

6

g

LinearTM Power MOSFET

w/Extended FBSOA

IXTH2N150L

DS100584(12/13)

V

DSS

= 1500V

I

D25

= 2A

R

DS(on)

 15



Advance Technical Information

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

Features

 Designed for Linear Operation

 International Standard Package

 Avalanche Rated

 Guaranteed FBSOA at 75

C

Advantages

 Easy to Mount

 Space Savings

 High Power Density

Applications

 DC Choppers

 DC-DC Converters

 Battery Chagers

 Programmable Loads

 Current Regulators

 Temperature and Lighting Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1500

V

GS(th)

V

DS = VGS, ID = 250A

6.0

8.5

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

15

A

T

J

= 125

C

150

A

R

DS(on)

V

GS = 20V, ID = 0.5 • ID25, Note 1

15



G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247

G

S

(Tab)

D

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