IXYS reserves the right to change limits, test conditions, and dimensions.

IXTT140N075L2HV

IXTH140N075L2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

50

65

80

S

R

Gi

Gate Input Resistance

1.24



C

iss

9300

pF

C

oss

V

2190

pF

C

rss

750

pF

t

d(on)

26

ns

t

r

83

ns

t

d(off)

100

ns

t

f

33

ns

Q

g(on)

275

nC

Q

gs

V

40

nC

Q

gd

108

nC

R

thJC

R

thCS

TO-247

0.21

C/W

Safe Operating Area Specification

Symbol

Test Conditions

Characteristic Values

Min.

Typ.

Max.

SOA

V

326

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

140

A

I

SM

Repetitive, pulse width limited by T

JM

560

A

V

SD

I

1.4

V

t

rr

200

ns

I

RM

14.0

A

Q

RM

1.4

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

 300s; duty cycle, d  2%.

Resistive Switching Times

V

R

I

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.