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L8002G-R20-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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L8002G-R20-R Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page ![]() L8002 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-B55a ABSOLU T E M AX I M U M RAT I N G PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -0.6 ~ 3 V Supply Current ICC 100 mA Maximum Drain Current ID 15 mA Maximum CSUB Sink Current ICSUB -500 uA Operating Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -50 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECT RI CAL CH ARACT ERI ST I CS (VCC=2.5V, ID=9.5mA, TA=25°C, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Supply Voltage VCC 2.375 2.5 2.625 V Supply Current ICC No FET 6 10 mA ISUB=0uA, VCC=2.5V -2 -1 V Negative Voltage VSUB ISUB=-200uA -1 V Oscillator Freq. fO 300 450 800 KHz Drain Current ID 8 9.5 12 mA Drain Current Change with VCC ∆IDV VCC=2.375V~2.625V 2 %/V VD1/VD2/VD3/VD4/VD5/VD6 Drain Offset Current ∆IDC 0.5 mA Drain Current Change with Temp. ∆IDT T=-40~85°C 0.5 %/°C Drain Voltage VD ID=9.5mA 1.8 2 2.2 V Drain Voltage Change with VCC ∆VDV VCC=2.375V~2.625V 0.5 %/V Drain Voltage Change ∆VDT T=-40~85°C 100 ppm/°C Dynamic Gate Voltage Range VG Csub without loading -2 0.7 V Drain Output Noise Voltage Vdn With drain bypass capacitor=10nF 0.05 VPP Gate Output Noise Voltage VGN With gate bypass capacitor=10nF 0.03 VPP |
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