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L8002G-R20-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # L8002G-R20-R
Description  FET BIAS CONTROLLER
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

L8002G-R20-R Datasheet(HTML) 4 Page - Unisonic Technologies

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L8002
Preliminary
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
www.unisonic.com.tw
QW-R502-B55a
ABSOLU T E M AX I M U M RAT I N G
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-0.6 ~ 3
V
Supply Current
ICC
100
mA
Maximum Drain Current
ID
15
mA
Maximum CSUB Sink Current
ICSUB
-500
uA
Operating Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-50 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RI CAL CH ARACT ERI ST I CS
(VCC=2.5V, ID=9.5mA, TA=25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply Voltage
VCC
2.375
2.5
2.625
V
Supply Current
ICC
No FET
6
10
mA
ISUB=0uA, VCC=2.5V
-2
-1
V
Negative Voltage
VSUB
ISUB=-200uA
-1
V
Oscillator Freq.
fO
300
450
800
KHz
Drain Current
ID
8
9.5
12
mA
Drain Current Change with VCC
∆IDV
VCC=2.375V~2.625V
2
%/V
VD1/VD2/VD3/VD4/VD5/VD6 Drain
Offset Current
∆IDC
0.5
mA
Drain Current Change with Temp.
∆IDT
T=-40~85°C
0.5
%/°C
Drain Voltage
VD
ID=9.5mA
1.8
2
2.2
V
Drain Voltage Change with VCC
∆VDV
VCC=2.375V~2.625V
0.5
%/V
Drain Voltage Change
∆VDT
T=-40~85°C
100
ppm/°C
Dynamic Gate Voltage Range
VG
Csub without loading
-2
0.7
V
Drain Output Noise Voltage
Vdn
With drain bypass capacitor=10nF
0.05
VPP
Gate Output Noise Voltage
VGN
With gate bypass capacitor=10nF
0.03
VPP



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