IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBA10N300HV

IXBH10N300HV

Symbol Test Conditions

Characteristic Values

Min.

Typ.

Max.

g

fS

I

6

11

S

C

ies

1044

pF

C

oes

V

42

pF

C

res

14

pF

Q

g

46

nC

Q

ge

I

5

nC

Q

gc

20

nC

t

d(on)

36

ns

t

r

340

ns

t

d(off)

100

ns

t

f

1850

ns

t

d(on)

40

ns

t

r

765

ns

t

d(off)

120

ns

t

f

2010

ns

R

thJC

0.69

°C/W

R

thCS

TO-247HV

0.21

°C/W

Note

1: Pulse test, t

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times, T

I

V

Resistive Switching Times, T

I

V

Reverse Diode

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

2.7

V

t

rr

1.6

μs

I

RM

23

A

Q

RM

18.6

μC

I

V

TO-247HV Outline

PINS:

1 - Gate 2 - Emitter

3, 4 - Collector

A

Q S

A3

e

c

A1

L1

D3

2X

A2

0P

3

1 2

e1

b

D1

D2

E2

E3

3X

4X

3X

b1

0P1

4

D

L

TO-263HV-2L Outline

PIN: 1 - Gate

2 - Emitter

3 - Collector

E

R

L

c

b

A

H

D

E

E1

L3

L4

A1

D1

E1

b2

c2

e2

A2

e1

L1

3

2

1