IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBA12N300HV

IXBT12N300HV

Symbol Test Conditions

Characteristic Values

Min.

Typ.

Max.

g

fS

I

6.5

10.8

S

C

ies

1290

pF

C

oes

V

56

pF

C

res

19

pF

Q

g(on)

62

nC

Q

ge

I

13

nC

Q

gc

8.5

nC

t

d(on)

64

ns

t

r

140

ns

t

d(off)

180

ns

t

f

540

ns

t

d(on)

65

ns

t

r

395

ns

t

d(off)

175

ns

t

f

530

ns

R

thJC

0.78

°C/W

Note

1: Pulse test, t

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times, T

I

V

Resistive Switching Times, T

I

V

Reverse Diode

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

2.1

V

t

rr

1.4

μs

I

RM

21

A

I

V

TO-263 (HV) Outline

TO-268 (HV) Outline

PIN: 1 - Gate

2 - Emitter

3 - Collector

PIN:

1 - Gate

2 - Emitter

3 - Collector

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.