IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF20N360

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

10

17

S

C

2045

pF

C

oes

V

110

pF

C

res

50

pF

Q

g(on)

110

nC

Q

ge

I

13

nC

Q

gc

43

nC

t

d(on)

18

ns

t

ri

14

ns

E

on

15.50

mJ

t

d(off)

238

ns

t

fi

206

ns

E

4.30

mJ

t

d(on)

20

ns

t

ri

22

ns

E

on

16.10

mJ

t

d(off)

247

ns

t

fi

216

ns

E

off

4.15

mJ

t

d(on)

30

ns

t

r

325

ns

t

d(off)

165

ns

t

f

1045

ns

t

d(on)

32

ns

t

r

890

ns

t

d(off)

185

ns

t

f

1100

ns

R

thJC

0.54 °C/W

R

thCS

0.15

°C/W

Inductive load, T

I

V

Note 3

Inductive load, T

I

V

Note 3

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

3. Switching times & energy losses may increase for higher V

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Reverse Diode

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

V

F

I

3.5

V

t

rr

1.7

μs

I

RM

35

A

Q

RM

30

μC

I

V

Resistive load, T

I

V

Resistive load, T

I

V

PRELIMANARYTECHNICAL

INFORMATION

The product presented herein is under

development. The Technical Specifica-

tions offered are derived from a subjec-

tive evaluation of the design, based upon

prior knowledge and experience, and

constitute a "considered reflection" of the

anticipated result. IXYS reserves the

right to change limits, test conditions, and

dimensions without notice.