IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF50N360

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

24

40

S

C

3990

pF

C

oes

V

195

pF

C

res

100

pF

Q

g(on)

210

nC

Q

ge

I

27

nC

Q

gc

77

nC

t

d(on)

46

ns

t

r

420

ns

t

d(off)

205

ns

t

f

1750

ns

t

d(on)

44

ns

t

r

845

ns

t

d(off)

210

ns

t

f

1670

ns

R

thJC

0.43 °C/W

R

thCS

0.15

°C/W

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

Resistive load, T

I

V

Resistive load, T

I

V

Reverse Diode

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

V

F

I

3.0

V

t

rr

1.7

μs

I

RM

48

A

Q

RM

40

μC

I

V

ADVANCETECHNICALINFORMATION

The product presented herein is under development. The Technical Specifications offered

are derived from a subjective evaluation of the design, based upon prior knowledge and

experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves

the right to change limits, test conditions, and dimensions without notice.

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

1

2

3

S

E

4

A

e1

U

A2

c

L

A1

D

b1

b

L1

Q

R

T

e