LESHAN RADIO COMPANY, LTD.

S-LSI1012XT1G

SC-89

10000/Tape&Reel

ORDERING INFORMATION

Device

Shipping

3000/Tape&Reel

LSI1012XT1G

LSI1012XT3G

Marking

MARKING DIAGRAM

A = Specific Device Code

M = Month Code

A

1

3

2

(Top View)

Drain

Gate

3

1

2

Source

A

A

FEATURES

D TrenchFETr Power MOSFET: 1.8-V Rated

D Gate-Source ESD Protected

D High-Side Switching

D Low On-Resistance: 0.7 W

D Low Threshold: 0.8 V (typ)

D Fast Switching Speed: 10 ns

BENEFITS

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Battery Voltage Operation

APPLICATIONS

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

N-Channel 1.8-V (G-S) MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

"6

V

600

500

400

350

mA

1000

mA

275

250

175

150

90

80

mW

275

250

mW

160

140

Operating Junction and Storage Temperature Range

−55 to 150

_C

Notes

d.

Pulse width limited by maximum junction temperature.

e.

Surface Mounted on FR4 Board.

Rev .A 1/6

LSI1012XT1G

D S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

S-LSI1012XT1G

S-LSI1012XT3G