IXFC52N30P datasheet(1/5 Pages) IXYS

Part #	IXFC52N30P

Description	PolarHTTM HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99115A(04/05)

PolarHTTM

HiPerFET

Power MOSFET

IXFC52N30P

V

DSS

= 300

V

I

D25

=

32

A

R

DS(on)

=

75 m

Ω

Advance Technical Information

N-Channel Enhancement Mode

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<30pF)

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

300

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.5

5.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

65

75

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

300

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

300

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C32

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

150

A

I

AR

T

C

= 25

°C52

A

E

AR

T

C

= 25

°C30

mJ

E

AS

T

C

= 25

°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 4 Ω

P

D

T

C

= 25

°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, t = 1minute, leads-to-tab

2500

V~

F

C

Mounting Force

11..65/2.5..15

N/lb

Weight

ISOPLUS220

2.0

g

ISOPLUS220TM(IXFC)

E153432

G

D

S

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