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SS1H4LW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SS1H4LW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  SS1H4LW-SS1H20LW CREAT BY ART - Low power loss, high efficiency - Ideal for automated placement - High surge current capability - Halogen-free according to IEC 61249-2-21 Case: SOD-123W Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test 1H4LW 1H6LW 1H10LW 1H15LW 1H20LW VRRM 40 60 100 150 200 V VRMS 28 42 70 105 140 V VDC 40 60 100 150 200 V IF(AV) A µA 0.1 mA TJ °C TSTG °C Note 1: Pulse test with PW=300μs, 1% duty cycle Version: A1606 UNIT SS1H20LW SS1H10LW SS1H6LW SS1H4LW 30 A 1 FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Marking Code Polarity: Indicated by cathode band Weight: 16 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SS1H15LW SYMBOL Taiwan Semiconductor Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1A, 40V - 200V Surface Mount Schottky Barrier Rectifiers Maximum instantaneous forward voltage (Note 1) @ 1 A VF V Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load 0.65 Maximum reverse current @ rated VR 0.70 IFSM Maximum repetitive peak reverse voltage 0.85 0.80 TJ=25°C IR TJ=125°C °C/W Typical thermal resistance RθJL RθJA 25 80 Operating junction temperature range Storage temperature range 0.3 0.5 0.2 SOD-123W - 55 to +175 - 55 to +175 |
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