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2SC5899 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5899 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5899 No.7538-2/4 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A 0 0 1 2 3 4 6 8 10 12 5 7 9 11 IC -- VCE IT06263 IT06265 IT06264 IT06266 12 56 34 789 10 0 IC -- VBE 0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 14 16 1.0 hFE -- IC 22 3 35 7 23 5 7 0.1 1.0 10 10 2 3 5 100 7 2 3 5 7 VCE(sat) -- IC 23 5 7 23 5 7 1.0 10 0.1 23 0.01 0.1 1.0 2 3 5 7 2 3 5 7 10 2 3 5 7 IB=0 0.1A 0.2A 0.4A 0.6A 0.8A 1.2A 1.6A 2.0A 1.0A 1.4A Ta=120°C 25°C --40°C Ta= --40°C 25 °C VCE=5V IC / IB=5 120 °C VCE=5V 1.8A Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=11A 4 7 Collector-to-Emitter Saturation Voltage VCE(sat) IC=10A, IB=2.5A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=10A, IB=2.5A 1.5 V Storage Time tstg IC=7A, IB1=0.9A, IB2=--3.6A 3.0 µs Fall Time tf IC=7A, IB1=0.9A, IB2=--3.6A 0.2 µs Switching Time Test Circuit VR RB VCC=200V VBE= --5V + + 50 Ω INPUT OUTPUT RL=28.6Ω 100 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 |
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