IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 75N10P IXTP 75N10P

IXTQ 75N10P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

20

28

S

C

iss

2250

pF

C

oss

V

890

pF

C

rss

275

pF

t

d(on)

27

ns

t

r

V

53

ns

t

d(off)

R

66

ns

t

f

45

ns

Q

g(on)

74

nC

Q

gs

V

18

nC

Q

gd

40

nC

R

thJC

0.42 K/W

R

thCK

(TO-3P)

0.21

K/W

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

75

A

I

SM

Repetitive

200

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

120

ns

-di/dt = 100 A/

µs

Q

RM

V

1.4

µC

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

TO-220 (IXTA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

TO-263 (IXTP) Outline