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SZMD0502 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SZMD0502
Description  Ultra Low Capacitance TVS/ESD Protection Diode
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SZMD0502 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SZMD0502 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SZMD0502 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SZMD0502
45W, 5V
Ultra Low Capacitance TVS/ESD Protection Diode
04-Aug-2017 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Pulse Power 1
PPP
45
W
Peak Pulse Current 1
IPP
3
A
Air model
±15
IEC61000-4-2
Contact model
VESD
±12
KV
Operating Temperature
TOPT
-55~125
°C
Storage Temperature
TSTG
-55~150
°C
Notes:
1.
According to IEC61000-4-5, the waveform of the non-repetitive 8/20 s pulsed current decays by exponents.
ELECTRICAL CHARACTERISTICS (T
A=25
°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Reverse Working Voltage
I/O to GND
VRWM
-
-
5
V
Reverse Breakdown Voltage
IT=1mA
Between I/O and GND
VBR
6
-
-
V
Reverse Leakage Current
VRWM=5V
Between I/O and GND
IR
-
-
1
µA
Clamping Voltage
IPP=1A, tp=8/20µs
Between I/O and GND
VC
-
8.5
12
V
Forward Voltage
IT=10mA
Between I/O and GND
VF
-
-
1
V
Junction Capacitance 1
VR=0V, f=1MHz
Between I/O and GND
CJ1
-
1
1.4
pF
Junction Capacitance 2
VR=0V, f=1MHz
Between I/O and I/O
CJ2
-
0.5
0.7
pF
ELECTRICAL CHARACTERISTICS CURVES



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