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EMIF04-10006Z2 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF04-10006Z2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() EMIF04-10006F2 2/7 Figure 2: Basic Cell Configuration Table 2: Absolute Ratings (limiting values) Table 3: Electrical Characteristics (Tamb = 25 °C) Symbol Parameter and test conditions Value Unit PR DC power per resistance 0.1 W PT Total DC power per package 0.6 W Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range 125 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input and output Cline Capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 5.5 7 9 V IRM VRM = 3.3 V per line 500 nA RI/O I = 10 mA 80 100 120 Ω Cline VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells) 50 60 70 pF Output 4 Input 1 30pF 30pF 100 Ω Output 1 Input 4 30pF 30pF 100 Ω D1 D2 30pF 30pF D3 D4 30pF 30pF Input 2 30pF 30pF 100 Ω Output 2 Input 3 30pF 30pF 100 Ω Output 3 I V IF VF IRM IR IPP VRM VBR VCL |
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