2N7002K

N-Ch Small Signal MOSFET with ESD Protection

Elektronische Bauelemente

30-Mar-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

60

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

Drain-Source On-Resistance

-

-

4

Ω

-

-

3

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±10

μA

Forward Transconductance

100

-

-

mS

Dynamic

Total Gate Charge

-

-

0.8

nC

Turn-On Time

-

-

20

nS

Turn-Off Time

-

-

40

Input Capacitance

-

-

35

pF

Output Capacitance

-

-

10

Reverse Transfer Capacitance

-

-

5

Source-Drain Diode

Diode Forward Voltage

-

0.82

1.3

V

Continuous Diode Forward Current

-

-

300

mA

Pulse Diode Forward Current

-

-

2000

mA