SSM9573-C datasheet(2/4 Pages) SECOS

2 / 4 page

SSM9573-C

-2.7A, -60V, RDS(ON) 175mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

27-Oct-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-60

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-1

-3

VDS=VGS, ID= -250µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage

Current

TJ=25°C

IDSS

-1

µA

VDS= -48V, VGS=0

TJ=55°C

-5

V DS= -48V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

175

VGS= -10V, ID= -2.5A

230

VGS= -4.5V, ID= -1.5A

Total Gate Charge

4.59

ID= -2A

VDS= -20V

VGS= -4.5V

Gate-Source Charge

Qgs

1.39

Gate-Drain (‘‘Miller’’) Change

Qgd

1.62

Turn-on Delay Time

Td(on)

17.4

VDS= -15V

VGS= -10V

RG=3.3

ID= -1A

Rise Time

5.4

Turn-off Delay Time

Td(off)

37.2

Fall Time

2.4

Input Capacitance

Ciss

531

VGS=0

VDS=15V

f=1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Diode Forward Voltage

VSD

-1.2

IS= -1A, VGS=0

Continuous Source Current

1.4

-2.7

VDS=VGS=0, Force Current

Pulsed Source Current

2.4

ISM

-5

Notes:

Surface mounted on a 1 inch

2 FR4 board with 2OZ copper, t≦10sec., 125°C/W when mounted on Min. copper pad.

The data tested by pulsed, pulse width≦300us, duty cycle≦2%.

The power dissipation is limited by 150°C junction temperature.

The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

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