SSM9577-C datasheet(2/4 Pages) SECOS

2 / 4 page

SSM9577-C

-3.8A, -60V, RDS(ON) 85mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

30-Oct-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-60

VGS=0, ID= -250uA

Gate-Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID= -250uA

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage

Current

TJ=25°C

IDSS

-1

VDS= -48V, VGS=0

TJ=55°C

-5

V DS= -48V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -3A

105

VGS= -4.5V, ID= -2A

Total Gate Charge

11.8

ID= -3A

VDS= -20V

VGS= -4.5V

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

6.5

Turn-on Delay Time

Td(on)

8.8

VDS= -15V

ID= -1A

VGS= -10V

RG=3.3

Rise Time

19.6

Turn-off Delay Time

Td(off)

47.2

Fall Time

9.6

Input Capacitance

Ciss

1080

VGS=0

VDS= -15V

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Forward On Voltage

VSD

-1.2

IS= -1A, VGS=0

Continuous Source Current

-3.8

Pulsed Source Current

ISM

-8

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

When mounted on Min. copper pad.

The power dissipation is limited by 150°C junct ion temperature.

The data tested by pulsed, Pulse width≦300us, Duty cycle≦2%.

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