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SSG4503J-C Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4503J-C Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  SSG4503J-C N-Ch: 6.9A, 30V, RDS(ON) 28m P-Ch: -6.3A, -30V, RDS(ON) 36m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 31-Oct-2017 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-Ch ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250µA Gate Threshold Voltage VGS(th) 1 1.5 3 V VDS=VGS, ID=250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=30V, VGS=0 Drain-Source On-Resistance 3 RDS(ON) - 10 28 m VGS=10V, ID=6A - 14 42 VGS=4.5V, ID=4A Forward Transfer conductance gfs 4 - - S VDS=10V, ID=6A Diode Forward Voltage 3 VSD - - 1.2 V VGS=0, IS=1.7A Total Gate Charge 3 Qg - 13.5 - nC VDS=24V VGS=4.5V ID=6A Gate-Source Charge Qgs - 1.4 - Gate-Drain Charge Qgd - 4.7 - Turn-on Delay Time 3 Td(on) - 5 - nS VDS=20V VGS=10V RD=20 RG=3.3 ID=1A Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 18.5 - Fall Time Tf - 9 - Input Capacitance Ciss - 770 - pF VDS=25V VGS=0 f=1MHz Output Capacitance Coss - 80 - Reverse Transfer Capacitance Crss - 75 - P-Ch ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250µA Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS=VGS, ID= -250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 µA VDS= -30V, VGS=0 Drain-Source On-Resistance 3 RDS(ON) - 16 36 m VGS= -10V, ID= -6A - 25 55 VGS= -4.5V, ID= -4A Forward Transfer conductance gfs 4 - - S VDS= -10V, ID= -6A Diode Forward Voltage 3 VSD - - -1.2 V VGS=0, IS= -1.7A Total Gate Charge 3 Qg - 20 - nC VDS= -24V VGS= -4.5V ID= -6A Gate-Source Charge Qgs - 2 - Gate-Drain Charge Qgd - 7 - Turn-on Delay Time 3 Td(on) - 8 - nS VDS= -15V VGS= -10V RD=15 RG=3.3 ID= -1A Rise Time Tr - 7 - Turn-off Delay Time Td(off) - 34 - Fall Time Tf - 26 - Input Capacitance Ciss - 1380 - pF VDS= -25V VGS=0 f=1MHz Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 140 - Notes: 1. These tests are performed with infinite heat sink. 2. Pulse width by Max. junction temperature. 3. Pulse Test: Pulse width≤300µs, duty cycle ≤2%. |
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