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S6008L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # S6008L
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

S6008L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  S6008L Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
S6008L
DESCRIPTION
·
With TO-220 isolated packaging
·
Electrically-isolated package
·
High surge capability
·
Glass passivated junctions and center gate fire for greater
parameter uniformity and stability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(RMS)
RMS on-state current
8
A
ITSM
Surge non-repetitive on-state current
( 1/2 cycle,sine wave;Tc=25℃ )
50HZ
60HZ
83
100
A
PG(AV)
Average gate power dissipation
Tp=8.3ms
0.5
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
VDM=VDRM
Tj=25℃
Tj=100℃
Tj=125℃
0.01
0.2
0.5
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
ITM= 8A
1.6
V
IGT
Gate-trigger current
VD = 12 V; RL=60Ω
15
mA
VGT
Gate-trigger voltage
VD = 12 V; RL=60Ω
1.5
V
Rth(j-c)
Thermal resistance
Junction to case
3.0
℃
/W


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