2SB601 datasheet(2/6 Pages) NEC

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Data Sheet D16131EJ3V0DS

2SB601

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC =

−3 A, IB1 = −3 mA, L = 1 mH

−100

Collector to emitter voltage

VCEX(SUS)1

IC =

−3 A, IB1 = −IB2 = −3 mA,

VBE(OFF) = 5.0 V, L = 180

µH, clamped

−100

Collector to emitter voltage

VCEX(SUS)2

IC =

−6 A, IB1 = −12 mA, IB2 = 3 mA,

VBE(OFF) = 5.0 V, L = 180

µH, clamped

−100

Collector cutoff current

ICBO

VCB =

−100 V, IE = 0

−10

µA

Collector cutoff current

ICER

VCE =

−100 V, RBE = 51 Ω, Ta = 125°C

−1.0

Collector cutoff current

ICEX1

VCE =

−100 V, VBE(OFF) = 1.5 V

−10

µA

Collector cutoff current

ICEX2

VCE =

−100 V, VBE(OFF) = 1.5 V,

Ta = 125

°C

−1.0

Emitter cutoff current

IEBO

VEB =

−5.0 V, IC = 0

−3.0

DC current gain

hFE1*

VCE =

−2.0 V, IC = −3.0 A

2,000

15,000

DC current gain

hFE2*

VCE =

−2.0 V, IC = −5.0 A

500

Collector saturation voltage

VCE(sat)*

IC =

−3.0 A, IB = −3.0 mA

−1.5

Base saturation voltage

VBE(sat)*

IC =

−3.0 A, IB = −3.0 mA

−2.0

Turn-on time

ton

0.5

µs

Storage time

tstg

1.0

µs

Fall time

IC =

−3.0 A, RL = 17 Ω,

IB1 =

−IB2 = −3.0 mA, VCC ≅ −50 V

Refer to the test circuit.

1.0

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

h)( CLASSIFICATION

Marking

hFE1

2,000 to 5,000

3,000 to 7,000

5,000 to 15,000

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

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