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3370PT Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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3370PT Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 7 page ![]() SEMICONDUCTOR Nell High Power Products RoHS RoHS FORWARD CONDUCTION PARAMETER SYMBOL UNIT TEST CONDITIONS VALUES Maximum average current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled A 70(55) ºC Maximum peak, one cycle non-reptitive surge current ITSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 8100 49000 51300 41160 43090 12005 10922 8471 2 kA s A 7706 t = 0.1 to 10 ms, no voltage reapplied Maximum l²t for fusing 120050 V 0.94 3370(2300) VTM l =4000A, pk T =T maximum t = 10 ms sine pulse J J , p 0.066 V VT(TO) rt mΩ 2 I √t 2 kA √s Maximum l²√t for fusing No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied Sinusoidal half wave, initial T = T maximum J J IT(RMS) lL lH Typical latching current Maximum holding current Maximum on-state voltage Maximum on-state slope resistance Maximum threshold voltage Maximum RMS on-state current DC at 25°C heatsink temperature double side cooled l = 4200A~12500A, T = T maximum T J J T = 25°C, anode supply 12V resistive load J A 1.20 mA 300 1000 2 I t SWITCHING PARAMETER SYMBOL UNIT TEST CONDITIONS VALUES Maximum non-repetitive rate of rise of turned-on current dl/dt l = l , TM T(AV) = μ ,T =T maximum, f = 50Hz J J V ≤ 66.7% V , I = 2A, D DRM FG t 0.3 s r A/µs td 200 2.0 µs V = 0.4 V , I = 2A, t = 0.3µs, T = 25°C D DRM FG J r tq Maximum delay time (Gate turn-on delay time ) Typical turn-off time Qrr Reverse recovery charge (Typical) I = 2000A, , dl/dt = -12.5 A/µs. TM V = 100V R T =T maximum J J , dV/dt = 50 V/µs, V ≤ 0.67 V D DRM 200 µC BLOCKING PARAMETER SYMBOL UNIT TEST CONDITIONS VALUES Minimum critical rate of rise of off-state voltage dV/dt T =T maximum, linear to 67% rated V J J DRM V/µs 1000 lRRM, Maximum peak reverse and off-state leakage current T =T maximum, rated V /V applied J J DRM RRM 200 mA lDRM, 3370PT Series 2800 I = 2000A, , V = 100V TM R di/dt = -12.5 A/µs T =T maximum , J J Page 2 of 7 www.nellsemi.com |
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