2SD1592 datasheet(2/4 Pages) NEC

Part #	2SD1592

Description	NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING

PDF	4 Pages

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Manufacturer	NEC [NEC]

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Data Sheet D16137EJ1V0DS

2SD1592

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 400 V, IE = 0

µA

DC current gain

hFE1*VCE = 2.0 V, IC = 2.0 A

400

3,000

DC current gain

hFE2*VCE = 2.0 V, IC = 3.0 A

100

Collector saturation voltage

VCE(sat)*IC = 2 A, IB = 5 mA

1.0

1.5

Base saturation voltage

VBE(sat)*IC = 2 A, IB = 5 mA

1.6

2.0

Turn-on time

ton

1.0

µs

Storage time

tstg

µs

Fall time

IC = 3.0 A, IB1 =

−IB2 = 30 mA

RL = 50

Ω, VCC ≅ 150 V

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE

400 to 800

600 to 1,200

1,000 to 3,000

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

Collector to Emitter Voltage VCE (V)

Case Temperature TC (

°C)

Collector Current IC (A)

Case Temperature TC (

°C)

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