K3639 datasheet(2/7 Pages) NEC

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Data Sheet D15967EJ3V0DS

2SK3639

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

µA

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±100

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.5

Forward Transfer Admittance

Note

| yfs |

VDS = 10 V, ID = 32 A

RDS(on)1

VGS = 10 V, ID = 32 A

4.4

5.5

Ω

Drain to Source On-state Resistance

Note

RDS(on)2

VGS = 4.5 V, ID = 32 A

5.8

8.5

Ω

Input Capacitance

Ciss

2400

Output Capacitance

Coss

970

Reverse Transfer Capacitance

Crss

VDS = 10 V

VGS = 0 V

f = 1 MHz

350

Turn-on Delay Time

td(on)

Rise Time

Turn-off Delay Time

td(off)

Fall Time

VDD = 10 V, ID = 32 A

VGS = 10 V

RG = 10

Ω

Total Gate Charge

Gate to Source Charge

QGS

7.6

Gate to Drain Charge

QGD

VDD = 16 V

VGS = 10 V

ID = 64 A

Body Diode Forward Voltage

Note

VF(S-D)

IF = 64 A, VGS = 0 V

0.96

Reverse Recovery Time

trr

IF = 64 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

PG.

Ω

D.U.T.

VDD

IG = 2 mA

VGS

Wave Form

VDS

Wave Form

VGS

VDS

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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