Power Transistors

1

Publication date: July 2004

SJD00320AED

2SC5993

Silicon NPN epitaxial planar type

For power amplification

For TV VM circuit

■ Features

• Satisfactory linearity of forward current transfer ratio h

FE

• High transition frequency (f

• Full-pack package which can be installed to the heat sink with one

screw.

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

12

3

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

180

V

Collector-emitter voltage (Base open)

180

V

Emitter-base voltage (Collector open)

6V

Collector current

1.5

A

Peak collector current

3A

Collector power dissipation

20

W

2.0

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

180

V

Collector-base cutoff current (Emitter open)

= 180 V, I

E

= 0

100

µA

Emitter-base cutoff current (Collector open)

100

µA

60

240



Collector-emitter saturation voltage

= 1 A, I

B

= 0.1 A

0.5

V

Transition frequency

130

MHz

Collector output capacitance

10

pF

(Common base, input open circuited)

Turn-on time

0.1

µs

Storage time

= 0.04 A, I

B2

= − 0.04 A

1.5

µs

Fall time

0.1

µs

Rank

Q

P

60 to 140

120 to 240

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Internal Connection

B

C

E