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STD2NB60T4 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD2NB60T4
Description  N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NB60T4 Datasheet(HTML) 1 Page - STMicroelectronics

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April 2004
STD2NB60
STD2NB60-1
N-CHANNEL 600V - 3.3
Ω - 2.6A DPAK/IPAK
PowerMESH™ MOSFET
REV. 2
Table 1. General Features
FEATURES SUMMARY
■ TYPICAL RDS(on) = 3.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Figure 1. Package
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Type
VDSS
RDS(on)
ID
STD2NB60
600 V
< 3.6
Ω
2.6 A
STD2NB60-1
600 V
< 3.6
Ω
2.6 A
3
2
1
1
3
IPAK
TO-251
DPAK
TO-252
Part Number
Marking
Package
Packaging
STD2NB60T4
D2NB60
DPAK
TAPE & REEL
STD2NB60-1
D2NB60
IPAK
TUBE


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