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FS8601R Datasheet(PDF) 5 Page - Fortune Semiconductor Corp. |
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FS8601R Datasheet(HTML) 5 Page - Fortune Semiconductor Corp. |
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5 / 6 page  FS8601R Rev. 1.1 5/6 8. Typical Characteristics On-Region characteristics @ Ta=20Deg -5.000 0.000 5.000 10.000 15.000 20.000 25.000 0.00 0.50 1.00 1.50 2.00 Vds, Drain to Source Voltage ( V ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V On-Region characteristics @ Ta=100Deg -5.000 0.000 5.000 10.000 15.000 20.000 0.00 0.50 1.00 1.50 2.00 Vds, Drain to Source Voltage ( V ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with Temperature On-Resistance V.S. Gate Voltage @ Id=4A 15 20 25 30 35 40 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Vgs, Gate to Source Voltage ( V ) 20 Deg 100 Deg Fig 5. Forward Characteristic of Reverse Diode |
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