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LD5850GS Datasheet(PDF) 9 Page - Leadtrend Technology |
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LD5850GS Datasheet(HTML) 9 Page - Leadtrend Technology |
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9 / 11 page ![]() LD5850 9 Leadtrend Technology Corporation www.leadtrend.com.tw LD5850-DS-00 November 2012 spikes below 275ns and the negative spike of the CS pin below -0.5V. However, the pulse width of the turn-on spike is determined according to the output power, circuit design and PCB layout. It is strongly recommended to add a smaller R-C filter for large power application to avoid CS pin from being damaged by the negative turn-on spike. CS Removable if the negative Spike is not over spec (-0.5V) DRV 275ns blanking time OCP Signal RCS 0.5V Fig. 2 The VRCS need be checked again by below equation to avoid the output power be limited by VCOMP_CLAMP. V 5 . 3 ) R I 3 ( ) Duty 3 . 1 ( 5 . 1 CS ) Peak ( L (%) x3 Sense Amplifier EA VSLOPE VCOMP_clamp=3.5V S RCS CS COMP FB Thermal Protection Thermal protection limits the whole power dissipation in this device. When the junction temperature reaches 150°C approximately, the thermal sensor will send the signal of shutdown logic to turn off this device and resume the operation after the IC’s junction temperature cools by 30° C PCB Layout Guideline It’s recommended to separate the high frequency switching current from the low-level control signals in layout. The high switching current (MOSFET, inductor, gate driver and FB return ends) may disturb the other low-level signals in the feedback loop and protection circuitry. As a result, it may cause the control function to behave abnormally. To avoid these side effects, a few guidelines are recommended for the PCB layout as below. 1. Route the VIN bypass capacitor and the signal ground close to the IC as possible. The traces between capacitor and VIN pin should be short as possible to avoid noise interference. 2. Use broader traces for VIN, VOUT and power ground. Those components connected to VIN, VOUT and power ground carry high input/output current, such as power MOSFET and decoupling capacitors. To minimize power loss in these traces, the resistance of traces should be kept as low as possible. 3. Use broader traces between power MOSFET drain, inductor and diode since they often carry high current in these traces. To minimize power loss in these traces, the resistance of traces should be minimized as possible. 4. Keep the gate drive traces short and broad around the IC driver output, DRV pin, and the power MOSFET. The driving traces have a high current spike during inverter operation. To minimize power MOSFET switching loss or oscillation voltage in the gate driver signal, the drive traces should be as broad and short as possible to minimize resistance and parasitic inductance. |
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