P0470ETFS datasheet(2/4 Pages) NIKOSEM

2 / 4 page

F-48-3

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P0470ETF:TO-220F

P0470ETFS:TO-220FS

Halogen-Free & Lead-Free

Gate Voltage Drain Current

IDSS

VDS = 700V, VGS = 0V , TC = 25 °C

A

VDS = 560V, VGS = 0V , TC = 100 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 2A

2.2

2.8

Forward Transconductance

gfs

VDS = 10V, ID = 2A

7.7

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

661

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDD = 560V, ID =4A, VGS = 10V

Gate-Source Charge

Qgs

2.9

Gate-Drain Charge

Qgd

3.2

Turn-On Delay Time

td(on)

VDD = 350V, ID =4A, RG= 6Ω

Rise Time

13.5

Turn-Off Delay Time

td(off)

Fall Time

12.3

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF =4A, VGS = 0V

Reverse Recovery Time

trr

IF =4A, dlF/dt = 100A / S

354

Reverse Recovery Charge

Qrr

2.4

1Pulse test : Pulse Width

 380 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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