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P1020HTFB Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P1020HTFB
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P1020HTFB Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.0
2
H-4-1
N-Channel Enhancement Mode
Field Effect Transistor
P1020HTFB
TO-220F
Halogen-Free & Lead-Free
NIKO-SEM
Drain-Source
On-State Resistance
1
RDS(ON)
VGS = 10V, ID = 5A
233
325
mΩ
VGS = 4.5V, ID = 5A
332
440
Forward Transconductance
1
gfs
VDS = 5V, ID = 5A
9.5
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
376
pF
Output Capacitance
Coss
71
Reverse Transfer Capacitance
Crss
12
Total Gate Charge
2
Qg
VDS =160V, VGS = 10V,
ID = 10A
12.6
nC
Gate-Source Charge
2
Qgs
1.7
Gate-Drain Charge
2
Qgd
5.3
Turn-On Delay Time
2
td(on)
10
nS
Rise Time
2
tr
VDD = 100V,
30
Turn-Off Delay Time
2
td(off)
ID  10A, VGS = 10V, RGEN = 6Ω
24
Fall Time
2
tf
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
10
A
Forward Voltage
1
VSD
IF = 10A, VGS = 0V
1
V
Reverse Recovery Time
trr
IF = 10A, dlF/dt = 100A / S
115
nS
Reverse Recovery Charge
Qrr
420
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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