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P1260ETFS Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P1260ETFS
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P1260ETFS Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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2
G-17-4
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
REV 1.0
P1260ETF:TO-220F
P1260ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 6A
518
670
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 6A
15
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
2023
pF
Output Capacitance
Coss
172
Reverse Transfer Capacitance
Crss
9
Total Gate Charge
2
Qg
VDD = 480V, ID =12A, VGS = 10V
44
nC
Gate-Source Charge
2
Qgs
9
Gate-Drain Charge
2
Qgd
14
Turn-On Delay Time
2
td(on)
VDD = 300V, ID =12A, RG= 25Ω
41
nS
Rise Time
2
tr
54
Turn-Off Delay Time
2
td(off)
169
Fall Time
2
tf
93
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
12
A
Forward Voltage
1
VSD
IF =12A, VGS = 0V
1
V
Reverse Recovery Time
trr
IF =12A, dlF/dt = 100A / S
449
nS
Reverse Recovery Charge
Qrr
6
uC
1Pulse test : Pulse Width
 380 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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