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P6015CDA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P6015CDA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV1.0 2 I-33-2 N-Channel Enhancement Mode Field Effect Transistor P6015CDA TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance 1 RDS(ON) VGS = 3V, ID = 7A 44 80 mΩ VGS = 5V, ID = 10A 43 70 VGS = 10V, ID = 10A 42 60 Forward Transconductance 1 gfs VDS = 5V, ID = 10A 80 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3072 pF Output Capacitance Coss 189 Reverse Transfer Capacitance Crss 79 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω Total Gate Charge 2 Qg VDS = 75V , ID = 10A, VGS = 10V 75 nC Gate-Source Charge 2 Qgs 4.4 Gate-Drain Charge 2 Qgd 13 Turn-On Delay Time 2 td(on) VDS = 75V ID 10A, VGS = 10V, RGEN =6Ω 15 nS Rise Time 2 tr 37 Turn-Off Delay Time 2 td(off) 140 Fall Time 2 tf 136 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 25 A Forward Voltage 1 VSD IF = 10A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 68 nS Reverse Recovery Charge Qrr 182 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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