PA520BA datasheet(1/4 Pages) NIKOSEM

Part #	PA520BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV 0.91

1

D-06-5

N-Channel Enhancement Mode

Field Effect Transistor

PA520BA

SOT-23-6

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

Continuous Drain Curren

TA = 25 ° C

ID

6.3

A

TA = 70 ° C

4.7

Pulsed Drain Current

1

IDM

30

Avalanche Current

IAS

17

Avalanche Energy

L = 0.1mH

EAS

15

mJ

Power Dissipation

TA = 25 ° C

PD

1.2

W

TA = 70 ° C

0.8

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

° C

THERMAL RESISTANCE RATING

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

40

° C / W

Junction-to-Ambient

2

RJA

98

1Pulse width limited by maximum junction temperature.

2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25° C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1

1.4

2.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 125 ° C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 10V, ID = 6.3A

15.3

20

mΩ

VGS = 4.5V, ID = 6.3A

18.2

25

Forward Transconductance

1

gfs

VDS = 5V, ID = 6.3A

41

S

G: GATE

D: DRAIN

S: SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

20mΩ

6.3A

G

D

S

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PA520BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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