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PC015BDA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PC015BDA
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PC015BDA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV1.0
2
H-30-1
N-Channel Enhancement Mode
Field Effect Transistor
PC015BDA
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 4.5V, ID = 6A
225
450
mΩ
VGS = 10V, ID = 6A
220
300
Forward Transconductance
1
gfs
VDS = 10V, ID = 6A
25
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
614
pF
Output Capacitance
Coss
42
Reverse Transfer Capacitance
Crss
26
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
1.4
Ω
Total Gate Charge
2
Qg
VDS = 75V, VGS = 10V,
ID = 6A
17
nC
Gate-Source Charge
2
Qgs
1.6
Gate-Drain Charge
2
Qgd
5.1
Turn-On Delay Time
2
td(on)
11
nS
Rise Time
2
tr
VDD = 75V,
14
Turn-Off Delay Time
2
td(off)
ID  6A, VGS = 10V, RGS = 6Ω
28
Fall Time
2
tf
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
6.4
A
Forward Voltage
1
VSD
IF = 6A, VGS = 0V
1.3
V
Reverse Recovery Time
trr
IF = 6A, dI/dt=100A/μs
40
nS
Reverse Recovery Charge
Qrr
51
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.



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