PC506BA datasheet(1/4 Pages) NIKOSEM

Part #	PC506BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV1.0

1

G-14-2

NIKO-SEM

N-Channel Enhancement Mode

Field Effect Transistor

PC506BA

SOT-89

Halogen-Free & Lead-Free

3

2

1

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

5.5

A

TA = 70 °C

4.4

Pulsed Drain Current

1

IDM

20

Avalanche Current

IAS

12.4

Avalanche Energy

L = 0.1mH

EAS

7.7

mJ

Power Dissipation

3

TA = 25 °C

PD

3

W

TA = 70 °C

2

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

40

°C / W

Junction-to-Ambient

2

Steady-State

RJA

64

Junction-to-Case

RJc

14

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

60mΩ

5.5A

G

D

S

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PC506BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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