PM606BA datasheet(1/4 Pages) NIKOSEM

Part #	PM606BA

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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REV 1.0

1

D-45-1

N-Channel Enhancement Mode Field

Effect Transistor

PM606BA

SOT-23(S)

Halogen-Free & Lead-Free

NIKO-SEM

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

5

A

TA = 70 °C

3.7

Pulsed Drain Current

1

IDM

15

Power Dissipation

TA = 25 °C

PD

0.8

W

TA = 70 °C

0.5

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

146

°C / W

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.75

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 55 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS =4.5V, ID = 5A

23

31

mΩ

VGS = 10V, ID = 5A

17

20

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

20mΩ

5A

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PM606BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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