SM7308CSKP datasheet(3/14 Pages) SINOPWER

3 / 14 page

SM7308CSKP

www.sinopowersemi.com

Rev. A.1 - November, 2015

N Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

N Channel

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.3

1.8

2.3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=9A

18.5

VGS=4.5V, IDS=8A

32.5

Diode Characteristics

VSD

Diode Forward Voltage

ISD=1A, VGS=0V

0.3

0.4

0.55

trr

Reverse Recovery Time

ISD=4.0A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

3.5

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,f=1MHz

3.3

Ciss

Input Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

395

514

Coss

Output Capacitance

105

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=6W

5.5

Turn-on Rise Time

10.5

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

3.7

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=4.0A

Total Gate Charge

VDS=15V, VGS=10V,

IDS=4.0A

8.3

12.5

Qgs

Gate-Source Charge

1.1

Qgd

Gate-Drain Charge

1.8

Note d：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

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