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2N7002T Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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2N7002T Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 5 page ![]() SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Value Unit VGS Gate-Source voltage ±20 V VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 150 mW TJ Junction Temperature 150 ℃ SOT-523 1. GATE 2. SOURCE 3. DRAIN Tstg Storage Temperature -55 ~+150 ℃ Thermal Resistance from Junction to Ambient Symbol RθJA 833 ℃/W 1 J,Sep,2016 M ARKING Equivalent Circuit APPLICATION Load Switch for Portable Devices DC/DC Converter V(BR)DSS RDS(on)MAX ID 60 V 5Ω@10V 115mA 7Ω@5V 1 2 3 K72 K72= Device Code Solid dot = Green molding compound device,if none, the normal device. TIGER ELECTRONIC CO.,LTD |
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