N32905R6DN datasheet(29/47 Pages) NUVOTON

29 / 47 page

N3290X DATASHEET

Nuvoton Technology Corp.

Release Date: May. 2013

http://www.nuvoton.com/

Rev. A5.1

ELECTRICAL SPECIFICATION

5.1

Absolute Maximum Rating

Parameters

Values

Ambient Temperature

-20 °C ~ 85 °C

Storage Temperature

-40 °C ~ 125 °C

Voltage On Any Pin

-0.3V ~ 3.6V

Power Supply Voltage (Core Logic)

-0.5V ~ 2.5V

Power Supply Voltage (I/O Buffer)

-0.5V ~ 4.6V

Injection Current (Latch-Up Testing)

100mA

Crystal Frequency

2MHz ~ 27MHz

5.2

DC Characteristics (Normal I/O)

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

VDD33

I/O Buffer Post-Driver Voltage

3.0

3.3

3.6

MVDD33

SDRAM Operation Voltage

3.0

3.3

3.6

VDD18

Core Logic and I/O

Buffer

Pre-Driver

Voltage

200MHz

1.62

1.8

1.98

MVDD18

DDR Operation

Voltage

100MHz

1.7

1.8

1.9

MVDDQ/

MVDD

DDR Operation

Voltage

100MHz

1.7

1.8

1.9

RTC_VDD

RTC Power Supply

1.2

1.8

IRTC_VDD

RTC Supply Current

RTC_VDD<VDD18

VIH

Input High Voltage

2.0

5.5

VIL

Input Low Voltage

-0.3

0.8

Threshold Point

1.45

1.58

1.74

VT+

Schmitt Trigger Low to High

Threshold Point

1.44

1.42

1.56

VT-

Schmitt Trigger High to Low

Threshold Point

0.89

1.06

0.99

ICC

Core Power Supply Current

FCPU = 200MHz,

MCLK = 100MHz,

VDD18 = 1.8V

160

Input Leakage Current

-10

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