SM8404CSQ datasheet(4/14 Pages) SINOPWER

4 / 14 page

SM8404CSQ

www.sinopowersemi.com

Rev. A.6 - December, 2015

P Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

P Channel

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=-250mA

-30

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250mA

-1.3

-1.8

-2.3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=-10V, IDS=-5.2A

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-3.2A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.75

-1

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IDS=-5.4A,

dlSD/dt=100A/ms

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

3.3

6.6

Ciss

Input Capacitance

580

754

Coss

Output Capacitance

105

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

8.7

15.5

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=-15V, RL=15W,

IDS=-1A, VGEN=-10V,

RG=6W

Gate Charge Characteristics

Total Gate Charge

VDS=-15V, VGS=-10V,

IDS=-5.4A

19.5

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=-15V, VGS=-4.5V,

IDS=-5.4A

Note e：Pulse test; pulse width

£300

ms, duty cycle£2%.

Note f：Guaranteed by design, not subject to production testing.

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