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PSM7N65CTF Datasheet(PDF) 2 Page - PFC Device Inc. |
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PSM7N65CTF Datasheet(HTML) 2 Page - PFC Device Inc. |
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2 / 10 page ![]() Characteristics Version 4.1 2 / 10 www.pfc-device.com PSM7N65CTF 1. Characteristics Maximum Ratings Characteristics ( TA = 25 oC unless otherwise specified ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 650 V ID Drain Current – Continuous (TC=25 ℃) 7.3 A Drain Current – Continuous (TC=100 ℃) 4.6 A ID pulsed Pulsed Drain Current tp limited by TJ max (Note 1) 21.9 A EAS Single Pulse Avalanche Energy (Noted 2) 200 mJ IAR Avalanche Current, repetitive tAR limited by TJ max 7.3 A VGS Gate-Source Voltage Static ±20 V VGS Gate-Source Voltage AC (f>1Hz) ±30 V Ptot Power Dissipation 32 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/nS Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 80 ℃/W RθJC Thermal Resistance Junction to case (Drain) --- 3.3 ℃/W |
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