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DGP8761 Datasheet(PDF) 2 Page - DISCO Corporation |
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DGP8761 Datasheet(HTML) 2 Page - DISCO Corporation |
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2 / 2 page ![]() Fully Automatic Grinder/Polisher DGP8761 Specifications DGP8761 Operation flow [1] The robot pick removes a wafer from the cassette and places it on the positioning table, where centering takes place. [2] The T1 arm places the wafer on the chuck table. [3] The wafer proceeds to Z1 for rough grinding. [4] The wafer proceeds to Z2 for fine grinding. [5] The wafer proceeds to Z3 for dry polishing (or ultra high-mesh wheel grinding). [6] [7] The T2 arm removes the wafer from the chuck table and places it on the spinner table, where cleaning and drying take place. [8] Transfer to the mounter (DFM2700, DFM2800) or the robot pick returns the workpiece to the cassette. Environmental conditions • Use clean, oil-free air at a dew point of -15 ℃ or less. (Use a residual oil: 0.1 ppm. Filtration rating: 0.01 µm/99.5 % or more). • Keep room temperature fluctuations within ±1 ℃ of the set value. (Set value should be between 20 - 25 ℃). • Use grinding water and cleaning water at room temperature +0 - 2 ℃ (fluctuation range: within 2 ℃ in one hour). For cooling water, use water controlled at 1 ℃ in relation to the grinding water. • The machines should be used in an environment, free from external vibration. Do not install machine near a ventilation opening, heat generation equipment or oil mist generating parts. • This machine uses water. In case of water leakage, please install the machine on the floor with sufficient waterproofing and drainage treatments. * All pressures specified above are gauge pressures. * As the above specification may change due to technical modifications .Please confirm when placing your order. * For further information, please contact your local sales representative. www.disco.co.jp 2017.12 Unit mm φ 300 (φ 200/φ 300) - In-feed grinding with wafer rotation - Anomalous in-feed grinding with wafer rotation - φ 300 Diamond wheel (grinding-axis) φ 450 Dry polishing pad (DP-axis) φ 450 CMP pad (CMP-axis) Thickness variation within one wafer µm φ 300mm, Less than 2.5 (grinding + DP 2 μm removal) Less than 2.5 (Z1・Z2-axis grinding only) Thickness variation between wafers µm φ 300mm, Less than ±2.5 (grinding + DP 2 μm removal) Less than ±2.5 (Z1・Z2-axes grinding only) Note: When NCG is used: less than ±1.5 Finished surface roughness µm 300mm, Ra is less than 0.005 (grinding + DP 2 μm removal) For Z1・Z2-axes grinding only, Ry is about 0.13 (for # 2000 finishing) mm 1,690 × 3,315 × 1,800 kg Approx. 6,700(DP・Poligrind) Approx. 6,900 (CMP) Specification Wafer Diameter Grinding Method (Z1 / Z2 axis) Machine weight Grinding Accuracy Machine dimensions (W×D×H) BG Grinding Method (Z3 axis) Grinding Wheels |
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