0.5W Zener Diode - BZX55A* series

PARAMETER

SYMBOL

VALUE

UNIT

Power Dissipation

Rev 1.0

07/04/19

500

mW

Junction Temperature

200

°C

Storage Temperature Range

-65 to +200

°C

1.3

V

ZENER VOLTAGE

RANGE

TEST CURRENT

REVERSE LEAKAGE CURRENT

DYNAMIC

RESISTANCE

f = 1 kHz

DEVICE

V

Ω

mA

µA Max.

V

Max.

Max.

Min.

 

Nom.

 

Max.

 

9.90

10

10.10

15

BZX55A10

5

1

0.1

2.0

7.5

70

BZX55A11

10.89

11

11.11

5

1

0.1

2.0

8.2

20

70

BZX55A12

11.88

12

12.12

5

1

0.1

2.0

9.1

20

90

BZX55A13

12.87

13

13.13

5

1

0.1

2.0

10

26

110

BZX55A15

14.85

15

15.15

5

1

0.1

2.0

11

30

110

BZX55A16

15.84

16

16.16

5

1

0.1

2.0

12

40

170

BZX55A18

17.82

18

18.18

5

1

0.1

2.0

13

50

170

BZX55A20

19.80

20

20.20

5

1

0.1

2.0

15

55

220

BZX55A22

21.78

22

22.22

5

1

0.1

2.0

16

55

220

BZX55A24

23.76

24

24.24

5

1

0.1

2.0

18

80

220

BZX55A27

26.73

27

27.27

5

1

0.1

2.0

20

80

220

BZX55A30

29.70

30

30.30

5

1

0.1

2.0

22

80

220

BZX55A33

32.67

33

33.33

5

1

0.1

2.0

24

80

220

BZX55A36

35.64

36

36.36

5

1

0.1

2.0

27

80

220

1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

reduce device reliability.

2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods.

Zener Voltages 2.4V to 9.1V are constructed using a smaller die geometry.

Please see here for further details

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