EMD03N06ES datasheet(1/7 Pages) EXCELLIANCE

Part #	EMD03N06ES

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	7 Pages

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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2016/10/25

p.1

EMD03N06ES

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

RDSON (MAX.)

4.0mΩ

ID

150A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

150

A

TC = 100 °C

97

Pulsed Drain Current

1

IDM

450

Avalanche Current

IAS

80

Avalanche Energy

L = 0.1mH, ID=80A, RG=25Ω

EAS

320

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

160

Power Dissipation

TC = 25 °C

PD

166

W

TC = 100 °C

66

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

0.75

°C / W

Junction‐to‐Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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EMD03N06ES Datasheet(PDF) 1 Page - Excelliance MOS Corp.

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