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FQB70N08 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FQB70N08 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor FQB70N08 · FEATURES · With To-263(D2PAK) package · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ± 25 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 70 49.5 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation @TC=25℃ 155 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.97 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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