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KI010NDS Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KI010NDS
Description  N-Channel MOSFET
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KI010NDS Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  KI010NDS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel MOSFET
KI010NDS
■
Features
●
VDS (V) = 20V
●
ID = 6 A (VGS = 10V)
●
RDS(ON) ＜ 12mΩ (VGS = 4.5V)
●
RDS(ON) ＜ 18mΩ (VGS = 2.5V)
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■
Absolute Maximum Ratings Ta = 25℃
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V,TJ=25℃
1
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
0.5
1
V
VGS=4.5V, ID=6A
12
VGS=2.5V, ID=5A
18
mΩ
RDS(On)
Static Drain-Source On-Resistance
■
Marking
Marking
010N
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±
12
Continuous Drain Current
ID
6
A
Power Dissipation
PD
2
W
Thermal Resistance.Junction- to-Ambient
RthJA
62.5
℃
/W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
℃


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