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KMBT4401 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KMBT4401 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type Transistors www.kexin.com.cn 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1+0.05 -0.01 MMBT4401 (KMBT4401) ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Device Dissipation Alumina Substrate PD 300 mW Thermal Resistance, Junction to Ambient RθJA 417 ℃ /W Junction and Storage Temperature TJ, Tstg -55 to150 ℃ NPN Transistors ■ Electrical Characteristics Ta = 25℃ * Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. 2X ■ Marking Marking Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Emitter-base breakdown voltage V(BR)EBO IE =100μA, IC = 0 6.0 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain * hFE IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V 20 40 80 100 40 300 IC = 150 mA, IB = 15 mA 0.4 IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.95 IC = 500 mA, IB = 50 mA 1.2 Transition frequency fT IC = 20 mA, VCE = 10 V, f = 100 MHz 250 MHz Delay time td VCC = 30 V, VEB = 2.0 V, 15 ns Rise time tr IC = 150 mA, IB1 = 15 mA 20 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 30 ns V V Collector-emitter saturation voltage * Base-emitter saturation voltage * VCE(sat) VBE(sat) 0.75 |
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